New scanning photoluminescence technique for quantitative mapping the surface recombination velocity in InP and related materials
Identifieur interne : 001597 ( France/Analysis ); précédent : 001596; suivant : 001598New scanning photoluminescence technique for quantitative mapping the surface recombination velocity in InP and related materials
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Abstract
This paper introduces a new approach, based on room temperature (RT) scanning photoluminescence (SPL) measurements, for non-destructive quantitative mapping of the surface or interface recombination velocity in compound semiconductor structures. The developed technique is validated and applied here to spatially resolved evaluation of the surface recombination velocity of InP substrates and InGaAs(C)/InP heterostructures. © 1999 Publication Board, Japanese Journal of Applied Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">New scanning photoluminescence technique for quantitative mapping the surface recombination velocity in InP and related materials</title><author><name sortKey="Krawczyk, Stanislas" uniqKey="Krawczyk S">Stanislas Krawczyk</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire dElectronique (UMR CNRS No. 5512), Ecole Centrale de Lyon, 69131 Ecully, France</s1> <sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Laboratoire dElectronique (UMR CNRS No. 5512), Ecole Centrale de Lyon, 69131 Ecully</wicri:regionArea> <placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Ecully</settlement></placeName></affiliation></author><author><name sortKey="Bejar, Moez" uniqKey="Bejar M">Moez Bejar</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire dElectronique (UMR CNRS No. 5512), Ecole Centrale de Lyon, 69131 Ecully, France</s1> <sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Laboratoire dElectronique (UMR CNRS No. 5512), Ecole Centrale de Lyon, 69131 Ecully</wicri:regionArea> <placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Ecully</settlement></placeName></affiliation></author><author><name sortKey="Khoukh, Abdelaziz" uniqKey="Khoukh A">Abdelaziz Khoukh</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Departement de Physique, Faculte des Sciences UCD, El-Jadida, Maroc</s1><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Maroc</country><wicri:regionArea>Departement de Physique, Faculte des Sciences UCD, El-Jadida</wicri:regionArea><wicri:noRegion>El-Jadida</wicri:noRegion></affiliation></author><author><name sortKey="Blanchet, Robert" uniqKey="Blanchet R">Robert Blanchet</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire dElectronique (UMR CNRS No. 5512), Ecole Centrale de Lyon, 69131 Ecully, France</s1> <sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Laboratoire dElectronique (UMR CNRS No. 5512), Ecole Centrale de Lyon, 69131 Ecully</wicri:regionArea> <placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Ecully</settlement></placeName></affiliation></author><author><name sortKey="Sermage, Bernard" uniqKey="Sermage B">Bernard Sermage</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>France Telecom, CNET, Laboratoire de Bagneux, 92225 Bagneux Cedex, France</s1><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>France Telecom, CNET, Laboratoire de Bagneux, 92225 Bagneux Cedex</wicri:regionArea><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Bagneux</settlement></placeName></affiliation></author><author><name sortKey="Cui, Delong" uniqKey="Cui D">Delong Cui</name><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>Department of Electrical Engineering, University of Michigan, Ann Arbor, Michigan 48109-2120</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Michigan</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of Michigan, Ann Arbor</wicri:cityArea></affiliation></author><author><name sortKey="Pavlidis, Dimitris" uniqKey="Pavlidis D">Dimitris Pavlidis</name><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>Department of Electrical Engineering, University of Michigan, Ann Arbor, Michigan 48109-2120</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Michigan</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of Michigan, Ann Arbor</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0224616</idno><date when="1999-02">1999-02</date><idno type="stanalyst">PASCAL 99-0224616 AIP</idno><idno type="RBID">Pascal:99-0224616</idno><idno type="wicri:Area/Main/Corpus">015309</idno><idno type="wicri:Area/Main/Repository">014417</idno><idno type="wicri:Area/France/Extraction">001597</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-4922</idno><title level="j" type="abbreviated">Jpn. J. Appl. Phys., Part I</title><title level="j" type="main">Japanese Journal of Applied Physics, Part I : Regular papers, short notes & review papers</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Carrier lifetime</term><term>Experimental study</term><term>Gallium arsenides</term><term>Indium compounds</term><term>Measuring methods</term><term>Phosphorus compounds</term><term>Photoluminescence</term><term>Semiconductor heterojunctions</term><term>Surface recombination</term><term>Surface treatments</term><term>Theoretical study</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7325</term><term>7866F</term><term>Etude expérimentale</term><term>Méthode mesure</term><term>Etude théorique</term><term>Indium composé</term><term>Phosphore composé</term><term>Gallium arséniure</term><term>Hétérojonction semiconducteur</term><term>Recombinaison superficielle</term><term>Traitement surface</term><term>Photoluminescence</term><term>Durée vie porteur charge</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">This paper introduces a new approach, based on room temperature (RT) scanning photoluminescence (SPL) measurements, for non-destructive quantitative mapping of the surface or interface recombination velocity in compound semiconductor structures. The developed technique is validated and applied here to spatially resolved evaluation of the surface recombination velocity of InP substrates and InGaAs(C)/InP heterostructures. © 1999 Publication Board, Japanese Journal of Applied Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-4922</s0></fA01><fA02 i1="01"><s0>JAPNDE</s0></fA02><fA03 i2="1"><s0>Jpn. J. Appl. Phys., Part I</s0></fA03><fA05><s2>38</s2></fA05><fA06><s2>2B</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>New scanning photoluminescence technique for quantitative mapping the surface recombination velocity in InP and related materials</s1></fA08><fA11 i1="01" i2="1"><s1>KRAWCZYK (Stanislas)</s1></fA11><fA11 i1="02" i2="1"><s1>BEJAR (Moez)</s1></fA11><fA11 i1="03" i2="1"><s1>KHOUKH (Abdelaziz)</s1></fA11><fA11 i1="04" i2="1"><s1>BLANCHET (Robert)</s1></fA11><fA11 i1="05" i2="1"><s1>SERMAGE (Bernard)</s1></fA11><fA11 i1="06" i2="1"><s1>CUI (Delong)</s1></fA11><fA11 i1="07" i2="1"><s1>PAVLIDIS (Dimitris)</s1></fA11><fA14 i1="01"><s1>Laboratoire dElectronique (UMR CNRS No. 5512), Ecole Centrale de Lyon, 69131 Ecully, France</s1> <sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Departement de Physique, Faculte des Sciences UCD, El-Jadida, Maroc</s1><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>France Telecom, CNET, Laboratoire de Bagneux, 92225 Bagneux Cedex, France</s1><sZ>5 aut.</sZ></fA14><fA14 i1="04"><s1>Department of Electrical Engineering, University of Michigan, Ann Arbor, Michigan 48109-2120</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA20><s1>992-995</s1></fA20><fA21><s1>1999-02</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>9959</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0224616</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Japanese Journal of Applied Physics, Part I : Regular papers, short notes & review papers</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>This paper introduces a new approach, based on room temperature (RT) scanning photoluminescence (SPL) measurements, for non-destructive quantitative mapping of the surface or interface recombination velocity in compound semiconductor structures. 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